Energy Capability of LDMOS as a Function of Ambient Temperature

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題名:	Energy Capability of LDMOS as a Function of Ambient Temperature
作者:	許健;Sheu, Gene
貢獻者:	資訊工程學系
關鍵詞:	laterally diffused MOS(LDMOS);critical temperature;thermal failure;energy capability;ambient temperature;SOA;TCAD simulation
日期:	2012-06
上傳時間:	2012-11-26 05:58:08 (UTC+0)
摘要:	Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results. The dependency of critical temperature on ambient temperature is shown.
關聯:	ULIS 2012
顯示於類別:	[資訊工程學系] 期刊論文

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