ASIA unversity:Item 310904400/18758
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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18758


    Title: Energy Capability of LDMOS as a Function of Ambient Temperature
    Authors: 許健;Sheu, Gene
    Contributors: 資訊工程學系
    Keywords: laterally diffused MOS(LDMOS);critical temperature;thermal failure;energy capability;ambient temperature;SOA;TCAD simulation
    Date: 2012-06
    Issue Date: 2012-11-26 05:58:08 (UTC+0)
    Abstract: Energy capability of a LDMOS device
    structure is shown to have nonlinear relationship with
    ambient temperature. Analytical model for energy
    capability has been discussed and is in good agreement
    with the simulation results. The dependency of critical
    temperature on ambient temperature is shown.
    Relation: ULIS 2012
    Appears in Collections:[Department of Computer Science and Information Engineering] Journal Artical

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