Energy Capability of LDMOS as a Function of Ambient Temperature

ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 > Item 310904400/18758

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/18758

题名:	Energy Capability of LDMOS as a Function of Ambient Temperature
作者:	許健;Sheu, Gene
贡献者:	資訊工程學系
关键词:	laterally diffused MOS(LDMOS);critical temperature;thermal failure;energy capability;ambient temperature;SOA;TCAD simulation
日期:	2012-06
上传时间:	2012-11-26 05:58:08 (UTC+0)
摘要:	Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results. The dependency of critical temperature on ambient temperature is shown.
關聯:	ULIS 2012
显示于类别:	[資訊工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	302	检视/开启

在ASIAIR中所有的数据项都受到原著作权保护.