ESD Simulation on GGNMOS for 40V BCD

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题名:	ESD Simulation on GGNMOS for 40V BCD
作者:	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
贡献者:	資訊工程學系
关键词:	ESD, GGNMOS, TLP, BCD, Reliability
日期:	2010-10
上传时间:	2012-11-26 05:56:54 (UTC+0)
摘要:	In this paper, TCAD was used to simulate GGNMOS (Grounded-Gate NMOS) as an ESD protection device for 40V BCD. The physic models and the calibration method are discussed in order to get better accuracy on the result. The effects of device parameter on the ESD robustness are investigated by device simulation in order to achieve the desired ESD design window. The simulated holding voltage is in agreement with BJT model that already proven has an agreement with silicon result. Finally, the ESD design window for 40V BCD device can be obtained by changing some device parameters.
關聯:	IEEE Region 10 Annual International Conference, Proceedings/TENCON
显示于类别:	[資訊工程學系] 期刊論文

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