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Please use this identifier to cite or link to this item:
http://asiair.asia.edu.tw/ir/handle/310904400/8696
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| Title: | SONOS memories with embedded silicon nanocrystals in nitride |
| Authors: | Liu, Mei-Chun;Chiang, Tsung-Yu;Kuo, Po-Yi;Chou, Ming-Hong;Wu, Yi-Hong;You, Hsin-Chiang;Cheng, Ching-Hwa;Liu, Sheng-Hsien;Yang, Wen-Luh;Lei, Tan-Fu;Chao, Tien-Sheng |
| Contributors: | Department of Computer Science and Information Engineering |
| Keywords: | Nanostructured materials;Nitrides;Nonmetals;Silicon;Silicon nitride;Control devices;Memory windows;Retention time (RT);Silicon nanocrystals (Si-nc);Tunneling oxides |
| Date: | 2008 |
| Issue Date: | 2010-04-07 13:27:27 (UTC+0) |
| Publisher: | Asia University |
| Abstract: | We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N<inf>2</inf>O is better than O<inf>2</inf> oxide. Retention property is improved when the thickness of N<inf>2</inf>O is increased to 3.0 nm. © 2008 IOP Publishing Ltd.
Number of references:15
Main heading:Data storage equipment
Controlled terms:Nanostructured materials - Nitrides - Nonmetals - Silicon - Silicon nitride
Uncontrolled terms:Control devices - Memory windows - Retention time (RT) - Silicon nanocrystals (Si-nc) - Tunneling oxides
Classification code:549.3 Others, including Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium and Zirconium - 722.1 Data Storage, Equipment and Techniques - 761 Nanotechnology - 804 Chemical Products Generally - 804.2 Inorganic Compounds
DOI:10.1088/0268-1242/23/7/075033
Database:Compendex
Compilation and indexing terms, Copyright 2009 Elsevier Inc. |
| Relation: | Semiconductor Science and Technology 23:075033 |
| Appears in Collections: | [資訊工程學系] 期刊論文
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