ASIA unversity:Item 310904400/8696
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 94286/110023 (86%)
Visitors : 21664960      Online Users : 665
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/8696


    Title: SONOS memories with embedded silicon nanocrystals in nitride
    Authors: Liu, Mei-Chun;Chiang, Tsung-Yu;Kuo, Po-Yi;Chou, Ming-Hong;Wu, Yi-Hong;You, Hsin-Chiang;Cheng, Ching-Hwa;Liu, Sheng-Hsien;Yang, Wen-Luh;Lei, Tan-Fu;Chao, Tien-Sheng
    Contributors: Department of Computer Science and Information Engineering
    Keywords: Nanostructured materials;Nitrides;Nonmetals;Silicon;Silicon nitride;Control devices;Memory windows;Retention time (RT);Silicon nanocrystals (Si-nc);Tunneling oxides
    Date: 2008
    Issue Date: 2010-04-07 13:27:27 (UTC+0)
    Publisher: Asia University
    Abstract: We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N<inf>2</inf>O is better than O<inf>2</inf> oxide. Retention property is improved when the thickness of N<inf>2</inf>O is increased to 3.0 nm. © 2008 IOP Publishing Ltd.
    Number of references:15
    Main heading:Data storage equipment
    Controlled terms:Nanostructured materials - Nitrides - Nonmetals - Silicon - Silicon nitride
    Uncontrolled terms:Control devices - Memory windows - Retention time (RT) - Silicon nanocrystals (Si-nc) - Tunneling oxides
    Classification code:549.3 Others, including Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium and Zirconium - 722.1 Data Storage, Equipment and Techniques - 761 Nanotechnology - 804 Chemical Products Generally - 804.2 Inorganic Compounds
    DOI:10.1088/0268-1242/23/7/075033
    Database:Compendex
    Compilation and indexing terms, Copyright 2009 Elsevier Inc.
    Relation: Semiconductor Science and Technology 23:075033
    Appears in Collections:[Department of Computer Science and Information Engineering] Journal Artical

    Files in This Item:

    File Description SizeFormat
    0KbUnknown406View/Open
    175.doc29KbMicrosoft Word207View/Open


    All items in ASIAIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback