A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

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Title:	A three-dimensional breakdown model of SOI lateral power transistors with a circular layout
Authors:	Guo, Yufeng;Wang, Zhigong;Sheu, Gene
Contributors:	Department of Computer Science and Information Engineering
Keywords:	Electric breakdown;Electric fields;Heterojunction bipolar transistors;Poisson distribution;Poisson equation;Power electronics;Simulators;Analytical results;Breakdown model;Breakdown voltage;Cathode region;Cylindrical coordinates;Design guidelines;Doping concentration;Drift regions;Electric field distributions;Experimental data;Medici simulations;Partially depleted;Power devices;Power transistors;Three dimensional space
Date:	2009-11
Issue Date:	2010-04-07 13:27:18 (UTC+0)
Publisher:	Asia University
Abstract:	This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N+N and P+N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. © 2009 Chinese Institute of Electronics.
Relation:	Journal of Semiconductors 20(11) :114006-1-4
Appears in Collections:	[資訊工程學系] 期刊論文

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