Preparation and optoelectronic characteristics analysis of Cu2ZnSnS4:O thin films

ASIA unversity > 資訊學院 > 光電與通訊學系 > 博碩士論文 > Item 310904400/80683

請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/80683

題名:	Preparation and optoelectronic characteristics analysis of Cu2ZnSnS4:O thin films
作者:	Hung, Ta-Chun
貢獻者:	光電與通訊學系
關鍵詞:	Sol-gel Cu2ZnSnS4:O Structure Composition Optoelectronic properties
日期:	2014-07-31
上傳時間:	2014-09-03 01:28:27 (UTC+0)
出版者:	Asia University
摘要:	This study used sol-gel method to prepare Cu2ZnSnS4:O film materials. Correlations between structural and optoelectronic characteristics of the Cu2ZnSnS4:O film were discussed. The Cu2ZnSnS4:O films had a kesterite structure of non-stoichiometric compositions. The oxygen content of 8.89 and 10.30 at.% which changed the microstructure and optoelectronic properties of Cu2ZnSnS4:O materials. With the increase of the oxygen contents, the transmittances of the films become obvious. Direct band gaps of Cu2ZnSnS4:O films were 3.48 and 3.55 eV, respectively. The materials are wide band gap semiconductor. The Cu2ZnSnS4:O films had absorption coefficients of >104cm-1, and resistivities of 19.68 and 5.86 Ωcm.
顯示於類別:	[光電與通訊學系] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	416	檢視/開啟

檢視Licence

在ASIAIR中所有的資料項目都受到原著作權保護.