Preparation and optoelectronic characteristics analysis of Cu2ZnSnS4:O thin films

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题名:	Preparation and optoelectronic characteristics analysis of Cu2ZnSnS4:O thin films
作者:	Hung, Ta-Chun
贡献者:	光電與通訊學系
关键词:	Sol-gel Cu2ZnSnS4:O Structure Composition Optoelectronic properties
日期:	2014-07-31
上传时间:	2014-09-03 01:28:27 (UTC+0)
出版者:	Asia University
摘要:	This study used sol-gel method to prepare Cu2ZnSnS4:O film materials. Correlations between structural and optoelectronic characteristics of the Cu2ZnSnS4:O film were discussed. The Cu2ZnSnS4:O films had a kesterite structure of non-stoichiometric compositions. The oxygen content of 8.89 and 10.30 at.% which changed the microstructure and optoelectronic properties of Cu2ZnSnS4:O materials. With the increase of the oxygen contents, the transmittances of the films become obvious. Direct band gaps of Cu2ZnSnS4:O films were 3.48 and 3.55 eV, respectively. The materials are wide band gap semiconductor. The Cu2ZnSnS4:O films had absorption coefficients of >104cm-1, and resistivities of 19.68 and 5.86 Ωcm.
显示于类别:	[光電與通訊學系] 博碩士論文

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