This study used sol-gel method to prepare Cu2ZnSnS4:O film materials. Correlations between structural and optoelectronic characteristics of the Cu2ZnSnS4:O film were discussed. The Cu2ZnSnS4:O films had a kesterite structure of non-stoichiometric compositions. The oxygen content of 8.89 and 10.30 at.% which changed the microstructure and optoelectronic properties of Cu2ZnSnS4:O materials. With the increase of the oxygen contents, the transmittances of the films become obvious. Direct band gaps of Cu2ZnSnS4:O films were 3.48 and 3.55 eV, respectively. The materials are wide band gap semiconductor. The Cu2ZnSnS4:O films had absorption coefficients of >104cm-1, and resistivities of 19.68 and 5.86 Ωcm.
