In this study, the structural, optical and electrical properties of CuCrO2 films were examined. The research showed that CuO、Cr2O3 and CuCr2O4 were intermediate phases for the formation of CuCrO2. Pure CuCrO2 was formed at temperature of 550℃ for 120 minutes. The average grain sizes were nanometer-scale. The annealing processes were favorable for CuCrO2 formation with a circle- and polygonal-like mixed microstructure. The crystal structure, microstructure, and defects are factors contributing to the electrical properties of CuCrO2. Reduction of point defects in the film, which contributed to decrease in the photon scattering and carrier concentration. Direct band gap of the films were respectively 2.81、2.82、2.86、3.0 and 3.03 eV. The film possesses a relatively low resistivity of 2.17×102 Ωcm due to a relatively high carrier concentration of 6.24×1015 cm3 and mobility of 4.79 cm2/Vs.
