This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson's solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substrate equivalent series resistance on current path length of top electrode to ground is also simulated. Optimum high-capacitance and low series resistance devices is proposed. Analytical results are in a good agreement with simulation results obtained by sentaurus and previous experimental data.
Relation:
IEEE 2nd international conference on next-generation electronics (ISNE 2013), pp.71-74.
