Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation

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Title:	Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation
Authors:	Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
Contributors:	資訊工程學系
Date:	201302
Issue Date:	2013-10-29 03:08:11 (UTC+0)
Abstract:	This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson's solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substrate equivalent series resistance on current path length of top electrode to ground is also simulated. Optimum high-capacitance and low series resistance devices is proposed. Analytical results are in a good agreement with simulation results obtained by sentaurus and previous experimental data.
Relation:	IEEE 2nd international conference on next-generation electronics (ISNE 2013), pp.71-74.
Appears in Collections:	[Department of Computer Science and Information Engineering] Journal Artical

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