A 2?D Analytical Model of SOI High?voltage Devices with Dual Conduction Layers

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题名:	A 2?D Analytical Model of SOI High?voltage Devices with Dual Conduction Layers
作者:	許健;Sheu, Gene
贡献者:	資訊工程學系
关键词:	Dual conduction layers;Model;Reduced surface field;SOI
日期:	2012-07
上传时间:	2012-11-26 05:58:14 (UTC+0)
摘要:	By solving 2-D Poisson’s equation, a new analytical model to calculate the electric field distribution of a SOI RESURF device with Dual Conduction Layers (Dual-CL) is firstly proposed. The proposed model is also available for the single RESURF and triple RESURF SOI devices without any modification. A matrix equation is developed for the determination of the lateral and vertical breakdown voltages, in which the influences of the N-top layer, P-top layer, and the N-drift region are all considered. A unified RESURF criterion of single RESURF, triple RESURF, and Dual-CL SOI devices is further derived for optimizing the structure parameters. A good agreement between the analytical results and the numerical results shows that the N-top layer and P-top layer have opposite impacts on the breakdown performance of Dual-CL SOI devices. In addition, an optimal trade-off between the breakdown voltage and the specific on-resistance for the triple RESURF and Dual-CL SOI devices is obtained due to the incorporation of the P-top layer.
關聯:	IETE TECHNICAL REVIEW
显示于类别:	[資訊工程學系] 期刊論文

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