"The dependence of the avalanche breakdown voltage on
vertically linear doping gradient of the drift region based on
Silicon-On-Insulator (SOI) lateral diffuse metal oxide
semiconductor (LDMOS) is studied. Vertically linear
doping profile (VD) of the LDMOS structure is exhibited to
obviously improve safe of operation area (SOA) from the
conventional uniform and variable linear doping structure.
From the BFOM (Baliga’s Figure of Merits), optimal
relationship between breakdown voltage and on-state
resistance (RonA) is found. The simulation results the
breakdown voltage of the VD SOI LDMOS device can be
improved by 19%,and 35% and the on-state resistance can
be lowered by 19% and 29% at 2 m and 3 m over
conventional. A 200 V LDMOS transistor with RonA of
less than 800 m -mm2
based on various SOI layers is
reported."
Relation:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
