A 5V/200V SOI Device with a Vertically Linear Graded Drift Region

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题名:	A 5V/200V SOI Device with a Vertically Linear Graded Drift Region
作者:	楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey
贡献者:	光電與通訊學系
日期:	2010-11
上传时间:	2012-11-26 02:22:42 (UTC+0)
摘要:	"The dependence of the avalanche breakdown voltage on vertically linear doping gradient of the drift region based on Silicon-On-Insulator (SOI) lateral diffuse metal oxide semiconductor (LDMOS) is studied. Vertically linear doping profile (VD) of the LDMOS structure is exhibited to obviously improve safe of operation area (SOA) from the conventional uniform and variable linear doping structure. From the BFOM (Baliga’s Figure of Merits), optimal relationship between breakdown voltage and on-state resistance (RonA) is found. The simulation results the breakdown voltage of the VD SOI LDMOS device can be improved by 19%,and 35% and the on-state resistance can be lowered by 19% and 29% at 2 m and 3 m over conventional. A 200 V LDMOS transistor with RonA of less than 800 m -mm2 based on various SOI layers is reported."
關聯:	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
显示于类别:	[光電與通訊學系] 期刊論文

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