The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits fabrication that use epitaxial wafers require a lightly epitaxial layer (1014-1017 atom/cm3) on a heavily doped substrate (1019-1021 atom/cm3). The distribution of vacancies and interstitials is important for the distribution of the high surface concentration enhancement of tail diffusivity and oxidation enhanced diffusion. We present the auto doping during the epitaxy growth process which is being ignored most of the time during the device fabrication. Also the defects which are formed during the growth of epitaxy. The present simulation solves for the transient interstitials distribution assuming that interstitials are at equilibrium with vacancies.
Relation:
China Semiconductor Technology International Conference
