Electrical Characteristics of a-SiGe:H Thin-Film Transistors with Sb/Al Binary Alloy Schottky Source/Drain Contact

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题名:	Electrical Characteristics of a-SiGe:H Thin-Film Transistors with Sb/Al Binary Alloy Schottky Source/Drain Contact
作者:	Cha-Shin Lin;Rong-Hwei Yeh;Inn-Xin Li;Jyh-Wong Hong
关键词:	Metal alloys;Amorphous thin films;Schottky contact
日期:	2003-10
上传时间:	2010-05-12 01:12:29 (UTC+0)
出版者:	Asia University
摘要:	The effects of composition of a-SiGe channel layer and annealing temperature on the electrical performances of the inverted-staggered thin-film transistors with Sb/Al binary alloy Schottky source/drain contact had been studied. The experimental results indicated that the device effective electron mobility could be enhanced significantly by reducing the Schottky barrier height between the source/drain contact metal and a-SiGe:H channel layer, and using an appropriate annealing temperature. Furthermore, by employing a composition-graded a-SiGe channel layer to form the source/drain Schottky contact with the top a-Ge:H channel segment, the device effective electron mobility could be further improved.
關聯:	Solid-State Electronics 47:1787-1791
显示于类别:	[光電與通訊學系] 期刊論文

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