Suppressing Dark-Current in Planar Si-Based MSM Photodetector with Alternated i-a-Si:H/i-a-SiGe:H Grade Superlattice-Like layers

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Title:	Suppressing Dark-Current in Planar Si-Based MSM Photodetector with Alternated i-a-Si:H/i-a-SiGe:H Grade Superlattice-Like layers
Authors:	Shih-Yung Lo;Yen-Lin Wei;Rong-Hwei Yeh;Jyh-Wong Hong
Keywords:	Ge-Si alloys;dark conductivity;metal-semiconductor-metal structures;photodetectors;semiconductor materials;10 muW 5 V;GSL structure;MSM photodetector;Si:H;SiGe:H;barrier layer;dark current suppression;device temporal response incident light;knee-voltage
Date:	2005-03
Issue Date:	2010-05-12 01:12:28 (UTC+0)
Publisher:	Asia University
Abstract:	To suppress the dark-current of a planar Si-based metal-semiconductor-metal photodetector (MSM-PD), alternated i-a-Si:H/i-a-SiGe:H grade superlattice-like layers (GSL) were employed as the barrier layer. Under a 0.83 μm incident light power of 10 μW and 5 V bias voltage, the dark-current, knee-voltage and responsivity of device were 0.31 nA, 1.8 V and 0.1 A/W, respectively. Also, the average full-width at half-maximum (FWHM) and fall-time of device temporal response were 116.1 and 388.6 ps, respectively, as measured with a periodic 0.83 μm 60 ps light pulse at a 10 V bias voltage. A very low dark-current and knee-voltage device was obtained owing to the employed alternated i-a-Si:H/i-a-SiGe:H GSL structure.
Relation:	IEE Electronics Letters 41(7):438-439
Appears in Collections:	[Department of Photonics and Communication Engineering] Journal Article

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