Investigation of Al2O3 Thin Film Passivation Layer by Liquid Phase Deposition

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題名:	Investigation of Al2O3 Thin Film Passivation Layer by Liquid Phase Deposition
作者:	Lin, Pin-Cheng
貢獻者:	光電與通訊學系
關鍵詞:	Liquid phase deposition;Aluminum oxide;Fixed oxide charge;Passivation layer
日期:	2015
上傳時間:	2015-10-08 01:28:11 (UTC+0)
出版者:	亞洲大學
摘要:	In this paper passivation layer of Al2O3 films prepared by liquid phase deposition on p-type (100) silicon substrate was investigated. The deposition solution of aluminum sulfate and sodium bicarbonate were used for Al2O3 deposition. The concentration of the sodium bicarbonate and boric acid in the deposition solution controls the rate of deposition of Al2O3 films. The optimal growth condition for the most effective film was pH value of 3.3. The best resulting of effective minority carrier lifetime and fixed charge density were 123.47 μs and -2.15×1012 cm-2 after anneal at 500°C in N2 atmosphere for 30 min. This passivation property has significant improvement that minority carrier lifetime increased by 41 times compared with bare silicon.
顯示於類別:	[光電與通訊學系] 博碩士論文

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