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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/91951


    Title: P型二氧化銅鎵光電半導體之特性研究
    Authors: 李昱嶔
    Contributors: 光電與通訊學系
    Keywords: 二氧化銅鎵;透明導電氧化物;磁控濺鍍;赤銅鐵礦結構
    Date: 2015
    Issue Date: 2015-10-08 01:19:26 (UTC+0)
    Publisher: 亞洲大學
    Abstract: 本研究使用濺鍍法及控制氮氣氛退火處理製備CuGaO2薄膜，探討CuGaO2薄膜之相變化與光電性質關係，在Cu-Ga-O相變化系統中，CuGa2O4與CuO相互反應形成CuGaO2，CuGaO2的相形成溫度為750°C， CuGaO2為高溫穩定相結構，薄膜斷面為多邊形之微結構，隨著退火溫度的增加，CuGaO2薄膜表面粗糙度、平均晶粒尺寸、直接能隙及電阻率隨之增加，CuGaO2薄膜表面粗糙度為5.70~7.31nm，CuGaO2平均晶粒尺寸在35.59~39.02nm之間，退火於750、800、850及900°C之CuGaO2直接能隙值為3.45、3.50、3.64、3.65eV，CuGaO2主要為吸收短波長之光子， CuGaO2薄膜在波長800nm約具有68%穿透率，霍爾係數為正值證實CuGaO2為P型電洞導電。
    Appears in Collections:[Department of Photonics and Communication Engineering] Theses & dissertations

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