Dependence of breakdown voltage on drift length and linear doping gradients in SOI RESURF LDMOS devices

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题名:	Dependence of breakdown voltage on drift length and linear doping gradients in SOI RESURF LDMOS devices
作者:	Yang, Shaoming;Tseng, Wenchin;Sheu, Gene
贡献者:	Department of Computer Science and Information Engineering
关键词:	Computer simulation;Electric breakdown;MOS devices;Optimization;Silicon on insulator technology;v
日期:	2009
上传时间:	2010-04-08 12:22:17 (UTC+0)
出版者:	Asia University
摘要:	An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200V for both off-state and on-state operations. LDMOS structure incorporating the proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance in comparison to uniformly doped P-SOI. ©2009 IEEE.
關聯:	ICEMI 2009 - Proceedings of 9th International Conference on Electronic Measurement and Instruments :4594-4597
显示于类别:	[資訊工程學系] 會議論文

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