The simulation tool is very important to develop process and design a new device structures. Device characteristics and physics phenomena also can be analyzed and predicted using this tool. But, it also have the limitation such us the physical model to describe the nature behaviours accurately. Selecting the models should be defined correctly. One of the critical processes is ion implantation because it is important to make a junction and determine the breakdown. For getting accurate results, the doping concentration profile in simulation should be calibrated with experiment, like Secondary Ion Mass Spectrometry (SIMS) profile. In this paper, Taurus analytical and Monte Carlo ion implantation model was investigated. The calibration will be difficult by using Taurus Analytical default Model. Using Taurus model by calibrating parameter can give a good agreement SIMS. Monte Carlo ion implantation model generally can give good profile prediction without calibration.
Relation:
2014 IEEE 8th International Power Engineering and Optimization Conference (PEOCO2014), Langkawi, The Jewel of Kedah,
