Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

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題名:	Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
作者:	Wu, Chi-Chang;Wu, Wen-Fa;Ko, Fu-Hsiang;You, Hsin-Chiang;Yang, Wen-Luh
貢獻者:	Department of Computer Science and Information Engineering
關鍵詞:	Annealing;Grain growth;Linewidth;Polymer films;Polysilicon;Sheet resistance;Thermodynamic stability;Morphological stability;Poly-Si-buffered films;Stack layers
日期:	2008
上傳時間:	2010-04-07 13:27:29 (UTC+0)
出版者:	Asia University
摘要:	The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film. © 2008 American Institute of Physics.
關聯:	Applied Physics Letters 92(18):182106
顯示於類別:	[資訊工程學系] 期刊論文

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