In this recent year, there has been a growing research interest in the area of power devices for various electronic applications, such as power management IC, ESD protection, switching devices, and Radio Frequency (RF) base station application. Lateral Diffused Metal Oxide Semiconductor (LDMOS) is the dominant device technology used in high power amplifiers and high voltage application. Power diode such as Transient Voltage Suppressor (TVS) diode also important for protecting sensitive semiconductors from damaging effects of transient voltages. This thesis consists of two parts: 80V High-side NLDMOS and Transient Voltage Suppressor (TVS) Diode. In part 1, Hot Carrier Injection (HCI) for reliability design and optimization of 80V High-side NLDMOS using n-drift region linear doping profile was discussed. The HCI simulation results can meet the specification and lifetime requirement. There are three important parameters for designing and optimizing High-side NLDMOS: breakdown voltage, on-resistance, and isolation voltage. In previous simulation, the isolation voltage can not match with experimental data. Using MonteCarlo implantation model, we found that our design with TCAD simulation software can be closely calibrated with experimental data in this thesis. In the part 2, Transient Voltage Suppressor (TVS) diode was designed and optimized. Three different structures of TVS were investigated. By adjusting the parameter using simulation tool, we can predict and analyze the behavior and electrical characteristic of the device to meet the specification target and give the trend curve of the devices.
