Effect of Al Mole Fraction on the Electrical Characteristics of AlGaN/GaN HEMTs with Recessed Gate Structure

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题名:	Effect of Al Mole Fraction on the Electrical Characteristics of AlGaN/GaN HEMTs with Recessed Gate Structure
作者:	Chang, Yi-Sheng
贡献者:	光電與通訊學系
关键词:	GaN AlGaN HEMTs Recessed gate 2DEG TCAD Mole fraction Piezoelectric Polarization Spontaneous Polarization heterostructure
日期:	2014-07-30
上传时间:	2014-09-03 02:41:59 (UTC+0)
出版者:	Asia University
摘要:	GaN material had attracted much attention in the high-voltage, high-power and device-switching applications because of their material characteristics of wide band gap and high breakdown voltage. Additionally, high electron concentration is found at the AlGaN/GaN heterointerface, which is caused by spontaneous polarization and piezoelectric polarization. This high electron concentration is called two dimensional electron gas(2DEG) with high mobility. This study focuses on improve the threshold voltage to reach normally-off operation. In this thesis, the normally-off recessed gate AlGaN/GaN HEMTs with suitable threshold voltages by modulating the mole fraction of Al in the various AlGaN layer thickness under the gate region are proposed using the Synopsys technology computer aided design (TCAD) simulator. It is found that the slope of threshold voltage versus Al mole fraction curves is decreased with decreasing the thickness of AlGaN layer due to the decrease of piezoelectric effect on 2DEG concentration to improve threshold voltage.
显示于类别:	[光電與通訊學系] 博碩士論文

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