A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

ASIAIR > College of Management > Department of International Business > Journal Artical > Item 310904400/79861

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Title:	A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
Authors:	蔡宗叡(TSAI, JUNG-RUEY)*、李克慧(Lee, Ko-Hui Lee)、林鴻志(Lin, Horng-Chih)、黃調元(Huang, Tiao-Yuan)
Contributors:	光電與通訊學系
Date:	2014-03
Issue Date:	2014-06-05 04:20:45 (UTC+0)
Abstract:	A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling through the tunnel oxide layer during programming and erasing (P/E) processes, and thus the operation voltage markedly decreases. Furthermore, the nonlocalized trapping feature characteristic of the FG makes the injection of electrons easier during the programming operation, which was demonstrated by technology computer-aided design (TCAD) simulations.
Relation:	Japanese Journal of Applied Physics
Appears in Collections:	[國際企業學系] 期刊論文

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