The need of low specific on-resistance (Ron) in semiconductor power devices leads to super junction device as a key component in achieving ideal trade-off between breakdown voltage and Ron to overcome the silicon limit [1]. Super junction device structure with trench has replaced multilayer super junction to reduce Ron and fabrication cost since the device size is smaller [2,3]. Fully depleted N-drift region is the main purpose in super junction structure in order to achieve charge balance for optimum result both breakdown voltage and Ron. This paper present new technology of sidewall implant super junction using arsenic implantation to reduce the effect of high electric field in the bottom of trench developed by Sentaurus Process and Device technologycomputer-aided-design (TCAD) simulators.
Relation:
IEEE Nanotechnology Materials and Device Conference 2013
