Ron Improvement with Duplex Conduction Channel

ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 > Item 310904400/64300

請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/64300

題名:	Ron Improvement with Duplex Conduction Channel
作者:	Manjunatha;Manjunatha;Vasanth;Vasanth;kumar, anil;kumar, anil;Kumar, Jaipal;Kumar, Jaipal;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;P.A.Chen
貢獻者:	資訊工程學系
日期:	201306
上傳時間:	2013-10-29 03:09:32 (UTC+0)
摘要:	This paper presents a low cost innovative duplex channel engineering to simulate and improve specific on-state resistance (Ron) of an Ultra high voltage (UHV) device without compromising on breakdown voltage. In manufacturing of UHV device,tradeoff between on state resistance and breakdown voltage is always present. But with our process design we are able to improve Ron by 15-20% without compromising the breakdown voltage. There are many devices in market with multiple conduction paths, but all these devices use high energy implants. These high energy implants are costly and accuracy of high dose/energy implants is less when compared to low dose/energy implants. Hence we have used a low cost and low energy implants for P-top and N-top to form an extra conduction path. Optimizations are done to obtain high breakdown voltage and lower Ron by varying the P-top and N-top over P-top. As reliability of device is important, we have investigated the interface charge effect on breakdown and the device sustain breakdown voltage for interface charge of 1.5e11. ESD test is also conducted and this structure can pass 4KeV
關聯:	International Power engineering and optimization conference, 2013(6),pp.83-87.
顯示於類別:	[資訊工程學系] 期刊論文

文件中的檔案:

檔案	大小	格式	瀏覽次數
index.html	0Kb	HTML	467	檢視/開啟

在ASIAIR中所有的資料項目都受到原著作權保護.

資料載入中.....