A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS

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題名:	A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS
作者:	Hui-Ting Yang
貢獻者:	Department of Computer Science and Information Engineering
關鍵詞:	Hot Carrier;Impact Ionization;Reliability
日期:	2009
上傳時間:	2009-11-18 13:14:51 (UTC+0)
出版者:	Asia University
摘要:	The reliability of the high voltage P-LDMOS is examined extensively by moving the impact ionization area and varying the surface electric field in the drift region. Breakdown walkout in high-voltage P-LDMOS devices on a thin SOI layer is demonstrated closely related to gate-metal field plate extension and gate channel length. The two field peaks along the channel can be reduced by varying the impact ionization area properly. N-well ion implantation dose monitoring and gate-metal field plate extensions are also studied to effectively improve the breakdown voltage and the reliability of the device with 12 micron P-drift length on SOI for 200V applications.
顯示於類別:	[資訊工程學系] 博碩士論文

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