A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS

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Title:	A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS
Authors:	Hui-Ting Yang
Contributors:	Department of Computer Science and Information Engineering
Keywords:	Hot Carrier;Impact Ionization;Reliability
Date:	2009
Issue Date:	2009-11-18 13:14:51 (UTC+0)
Publisher:	Asia University
Abstract:	The reliability of the high voltage P-LDMOS is examined extensively by moving the impact ionization area and varying the surface electric field in the drift region. Breakdown walkout in high-voltage P-LDMOS devices on a thin SOI layer is demonstrated closely related to gate-metal field plate extension and gate channel length. The two field peaks along the channel can be reduced by varying the impact ionization area properly. N-well ion implantation dose monitoring and gate-metal field plate extensions are also studied to effectively improve the breakdown voltage and the reliability of the device with 12 micron P-drift length on SOI for 200V applications.
Appears in Collections:	[Department of Computer Science and Information Engineering] Theses & dissertations

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