Taper angle of silicon nitride thin film control by laser direct pattern for transistors fabrication

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Title:	Taper angle of silicon nitride thin film control by laser direct pattern for transistors fabrication
Authors:	陳兆南;Chen, Chao-Nan;Huang, Jung-;Huang, Jung-Jie;Wu, Gwo-Mei;Wu, Gwo-Mei;Chien, How-W;Chien, How-Wen
Contributors:	資訊工程學系
Keywords:	Laser Direct Patterning;Silicon Nitride (SiNx);Taper Angle;Thin-Film Transistor (TFT)
Date:	2013-01
Issue Date:	2013-07-11 06:19:06 (UTC+0)
Abstract:	Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.
Relation:	Applied Mechanics and Materials, Volumes 284 - 287 : 225-229
Appears in Collections:	[Department of Computer Science and Information Engineering] Journal Artical

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