A Novel 800V Multiple RESURF LDMOS Utilizing

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题名:	A Novel 800V Multiple RESURF LDMOS Utilizing
作者:	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
贡献者:	資訊工程學系
日期:	2011
上传时间:	2012-11-26 05:54:16 (UTC+0)
摘要:	In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve a specific on-resistance of lower than 130 mΩcm2 while maintaining a breakdown voltage of over 800 volts. The key feature of this novel device is round shape p-top rings which are located on the surface of n-drift region. Optimization of p-top mask design is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage. An investigation of 3D effect in cylindrical layout is also presented to confirm the performance of device.
關聯:	tencon 2010
显示于类别:	[資訊工程學系] 期刊論文

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