Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface

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題名:	Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
作者:	楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
貢獻者:	資訊工程學系
日期:	2012-09
上傳時間:	2012-11-22 09:15:46 (UTC+0)
摘要:	In this work, the behavior of Si-H bond generating interface trap was studied by experiment and TCAD simulation. Its behavior is responsible for the increasing of PMOSFET absolute threshold voltage due to negative bias temperature instability (NBTI) stress for device reliability issue. It was found that the temperature stress has more significant influence on initial interface trap generation as compare to the electric field stress. In addition, fast triangular pulse measurement with elevated temperature was applied to eliminate the NBTI recovery effect and gives a better evaluation of the number of generated interface trap, as compared to the conventional DCIV measurement under NBTI stress.
關聯:	IEEE-ICSE2012 Proc., 2012
顯示於類別:	[資訊工程學系] 會議論文

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