Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices

ASIA unversity > 資訊學院 > 資訊工程學系 > 會議論文 > Item 310904400/13487

請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/13487

題名:	Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
作者:	許健;Sheu, Gene;許健;Sheu, Gene
貢獻者:	資訊工程學系
關鍵詞:	SOI;Breakdown voltage;variation of lateral doping;LDMOS.
日期:	2009-08
上傳時間:	2012-11-22 09:14:47 (UTC+0)
摘要:	An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200 V for both off-state and on-state operations. LDMOS structure incorporating the proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance in comparison to uniformly doped P-SOI.
關聯:	2009 ICEMI
顯示於類別:	[資訊工程學系] 會議論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	315	檢視/開啟

在ASIAIR中所有的資料項目都受到原著作權保護.