Study of Energy Handling Capability and Failure of LDMOSFET

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題名:	Study of Energy Handling Capability and Failure of LDMOSFET
作者:	Anumeha
貢獻者:	Department of Computer Science and Information Engineering Gene Sheu
關鍵詞:	thermal failure;TCAD simulation;laterally diffused MOS(LDMOS);SOA;RESURF;energy capability;critical temperature;ambient temperature
日期:	2012
上傳時間:	2012-11-18 09:53:56 (UTC+0)
出版者:	Asia University
摘要:	The thermal failure mechanism of lateral double diffused MOSFET (LDMOS) has been studied for different ambient temperatures in this work. The energy handling capability of the device is studied using simulation and analytical modeling. The energy capability is shown to have a nonlinear relationship with ambient temperature. The relationship between critical temperature and ambient temperature is investigated in detail. The device failure occurs when the gate control is lost due to thermal runaway. At this instant the intrinsic carrier concentration equals the background doping concentration and depletion in channel is totally wiped off.
顯示於類別:	[資訊工程學系] 博碩士論文

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