The thermal failure mechanism of lateral double diffused MOSFET (LDMOS) has been studied for different ambient temperatures in this work. The energy handling capability of the device is studied using simulation and analytical modeling. The energy capability is shown to have a nonlinear relationship with ambient temperature. The relationship between critical temperature and ambient temperature is investigated in detail. The device failure occurs when the gate control is lost due to thermal runaway. At this instant the intrinsic carrier concentration equals the background doping concentration and depletion in channel is totally wiped off.
