ASIA unversity:Item 310904400/12513
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    請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/12513


    題名: Effect of Phase Transformation on Optoelectronic Properties of Copper Chromium Oxide Thin Films
    作者: Wu, Chung-Ming
    貢獻者: Department of Photonics and Communication Engineering
    Ruei-Sung Yu
    關鍵詞: Phase transformation;Optoelectronic properties;Copper chromium oxide;Transparent conductive film
    日期: 2012
    上傳時間: 2012-11-18 08:21:45 (UTC+0)
    出版者: Asia University
    摘要: In this study, Cu-Cr-O films were prepared using reactive magnetron sputtering deposition on quartz substrates, and then annealed under controlled argon atmosphere at temperature of 500~625 ℃ for 3 minutes. The effects of phase transformation on optoelectronic properties of Cu-Cr-O films were identified.The as-deposited Cu-Cr-O film was amorphous. After annealed at temperature of 500~575 ℃, the films underwent phase transformation and turned into a composite structure of CuO and CuCr2O4. The film annealed at 600 ℃, the CuCrO2 was a main phase and CuO became a very minor phase. After annealed at 625 ℃, the film turned into a single-phase CuCrO2 structure.The as-deposited film had a smooth surface. Annealing treatment temperature of 500~575 ℃ made the films surface morphology with round-like microstructure. As the annealing temperature increased, the round-like microstructure grew. When annealing temperature higher than 600 ℃, the CuCrO2 films had bar-like microstructure on its surface. The root mean square (RMS) roughness values of CuCrO2 film annealed at 600 and 625 ℃ were 16.2 and 17.7 nm, respectively.The CuCrO2 films showed relatively high transmittance about 60 % at visible wavelength of 550 nm. For the CuCrO2 films annealed at 600 and 625 ℃, the direct energy band gaps were 3.08 and 3.12 eV, the resistivity values of 8.23 and 4.31 Ωcm, the carrier concentrations of 6.05×1017 and 4.17×1018 cm-3, and the carrier mobilities of 1.22 and 0.33 cm2/V-s, respectively. The CuCrO2 films had positive Hall coefficients, indicated that the CuCrO2 films were p-type semiconductors with its main electricity carriers as holes.
    顯示於類別:[光電與通訊學系] 博碩士論文

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