工业技术硕士论文 半导体技术研发硕士项目 由于自发极化和压电极化的存在，GaN 通常是一种常开器件。因此，我们对增强型器件进行了氮离子注入，使其正常关闭。 本研究提供了一种新的、可大规模制造的低成本离子注入方法，用于将 D 型 AlGaN/GaN 晶体管转变为 E 型。我们使用 TCAD 模拟在 300 KeV 能量下使用氮注入将 D 模式校准晶体管转换为常闭器件，这使带隙能量高于费米水平此外，使用不同的氮注入剂量获得改变的阈值电压 (Vth) .由于碰撞电离，在室温下，E 型 AlGaN/GaN HEMT 显示出 127.4 的击穿电压，具有正温度系数 (3 × 10−3 K −1)。当前工作中的 GaN 器件 E-Mode AlGaN 显示了 45.3% 的漏极电流平均增益，这支持了传输特性的研究。因此，建议的方法允许对具有 1487 cm2V-1s-1 迁移率和 4 V 时 1.4 A/mm 漏极饱和电流的 100μm 宽器件进行建模。建议方法在性能和性能方面的优势处理总结在这里。 Thesis for the Degree of Master of Science in Industrial Technology R&D Master Program on Semiconductor Technology Because of the presence of spontaneous and piezoelectric polarizations, GaN is a normally on device in general. So, we used Nitrogen ion implantation for the Enhancement mode device to turn it off normally. This study provides a new, mass-manufacturable, low-cost ion implantation approach for transforming D-Mode AlGaN/GaN transistors into E-mode. We transformed a D-Mode calibrated transistor into a normally off device using nitrogen implantation at a 300 KeV energy, which gave bandgap energy above the Fermi level, utilizing TCAD simulations Furthermore, the altered threshold voltage (Vth) was obtained using varying nitrogen implantation dosage. Because of impact ionization, at room temperature the E-mode AlGaN/GaN HEMT displayed 127.4 breakdown voltage, with the positive temperature coefficient (3 × 10−3 K −1). The average gain of drain current with 45.3% was shown by E-Mode AlGaN, GaN device in the current work, which supports an investigation of transfer characteristics. As a result, the suggested approach permitted the modelling of 100μm-wide device with the mobility of 1487 cm2V-1s-1 and the drain saturation current of 1.4 A/mm at 4 V. The benefits for the suggested approach in terms of performance and processing are summarized here.
