GaN-GaN/AlGaN/GaN HEMT for switching applications are becoming a reality and finding their way into the semiconductor-device market. The unique nature of GaN technology is wide band gap, which makes it be an excellent candidate for high power device materials. It is a prime technique to develop the high-power equipment’s in telecommunication, radar and automotive industries. The advantages of GaN-based devices are the high break down and electron mobility, which promise better performance than Si-based devices. Although there are still significant challenges to be overcome in order to produce high quality devices on these substrates. The use of GaN-on-Sic substrate for high power transistors is becoming an increasingly common choice, as an affordable large area alternative to expensive bulk substrates. To advance the presentations of HEMT hetero structures, additional advancement named recorded plate method manufacture it possible. This paper looks at the impacts of field plate structure with ILD as nitride on the exhibition of GaN/AlGaN/GaN High electron portability transistor (HEMT). The fundamental aftereffects of the field plate are to control the field dispersion in the channel and to diminish its pinnacle an incentive on the channel side of the entryway edge. The bit of leeway is an expansion of the breakdown voltage. The results from the simulations clears shows the combination of field plate and ILD layer thickness gives the low Dynamic Ron proportion.
