本研究以溶膠-凝膠法製程，將鎳(Ni)原子摻雜於MgCo2O4薄膜中，以X光繞射分析儀(XRD)、可見光紫外光分光儀(UV-Vis) 、IV量測儀以及霍爾效應分析儀，分別對薄膜進行結構、光學和電學性質分析，XRD分析顯示薄膜不受鎳(Ni)原子摻雜而產生雜相結構，所有薄膜均維持單一相結構，繞射峰分別為(220)、(311)、(400)、 (511)及(440)，隨著Ni摻雜含量的增加，晶粒尺寸下降，在波長300~450nm摻雜Ni後在此波段透光率有下降趨勢，能隙受摻雜含量上升，未摻雜薄膜的1.78上升至2.04eV，在Mg(Co1- xNix)2O4 薄膜為Nix=0.02時有最低的電阻率為2.66(Ω-cm)，載子濃度Nix=0.00為1.736×1014(cm-3 )上升至Nix=0.02為2.67×1014(cm-3 )，所有薄膜霍爾係數皆為正值，顯示所有Mg(Co1- xNix)2O4薄膜均為P型半導體，Ni能夠有效的摻雜於MgCo2O4薄膜內，實現薄膜應用於光電半導體發展的潛力。 In this study, nickel (Ni) atoms were doped into MgCo2O4 thin films by a sol-gel process. The structural, optical, and electrical properties of the thin films were analyzed by using X-ray diffraction analyzer (XRD), visible light ultraviolet spectrometer (UV-Vis), IV instrument, and Hall effect analyzer, respectively. XRD analysis showed that the films were single-phase structure, which the diffraction peaks were (220), (311), (400), (511) and (440), respectively. With the increase of Ni doping content that grain size decreases. The films with Ni doping at the wavelength of 300~450 nm had a downward trend. The energy gaps were increased from1.78 to 2.04eV with increasing doping contents. The lowest electric property of the Mg(Co1- xNix)2O4 film was Nix=0.02, which resistivity of 2.66 (Ω-cm) and the carrier concentration of 2.67×1014 (cm-3). All of thin-film Hall coefficients were positive, showing that Mg(Co1- xNix)2O4 films were p-type semiconductors. In this study, Ni can be efficiently doped into MgCo2O4 thin films, enabling the rapid development of semiconductors.
