在本研究中，利用橢圓偏光儀對絕緣層上覆矽試片氧化層之厚度進行量測。在量測絕緣層上覆矽試片時，由於試片為多層結構且含有高摻雜，導致不易與量測數據吻合。為了了解橢圓偏光儀之原理，本文從電磁學著手進行。理解橢圓偏光儀中的機台原理之後，利用穿透電子顯微鏡取得樣品各層厚度。進行校正後發現高摻雜的影響，主要在氧化層底部所貢獻之波長區域，若過度強調底部所產生曲線之正確性，反而造成試片表面氧化層之誤差。利用選擇受摻雜濃度影響較低的表層波長區段進行曲線分析。量測到的氧化層厚度較準確。
In this paper, the thickness of the oxide layer of silicon on insulator samples was measured using ellipsometry. Because the silicon on insulator samples were highly doped the experimented data were hard to fit using theoretical fitting. In order to understand the principle of ellipsometry, this paper reviewed principle using electromagnetics. Based on the principles of ellipsometry. Electron microscopy the thickness obtained by ellipsometry was calibrated using microscopy. It was found that the high doped affected the spectrum from layers under the oxide. The high weighting of the spectrum from the bottom layers would increase the error in the thick film oxide layer when the experimental data were fitted by theoretical carves. There choosing the spectrum from the surface layer for wavelength the determine oxide thickness would be more accurate.
