本研究旨在探討POCL3的預置，再尚未做制程時先行進行預置與矽基片做擴散深度的結合，達到效率的提升，利用溫度在升溫的過程中，先行置入POCL3做擴散深度結合入矽晶格內，使得N型的參雜物(dopant)更為深入，形成P—N接合。
研究結論如下：
透過實驗，可以得到先行做預置的動作確實可以提高矽晶片的效率。
實驗各種金字塔大小的矽晶片，佐証金字塔大小影響效率因素不大。
This study aims to explore the preset of POCL3. When the process is not yet done, the preset depth and the diffusion depth of the 矽 substrate are combined to achieve the efficiency improvement. In the process of temperature rise, POCL3 is first inserted for diffusion depth combination. Into the lattice, the N-type dopant is deeper and forms a P-N junction.
The research conclusions are as follows:
First, through the experiment, you can get the preset action to improve the efficiency of the silicon wafer.
Second, experiment with various pyramid-sized enamel wafers, which proves that the size of the pyramid affects the efficiency factor.
