A method proposed to effectively hoist the power
conversion efficiency (PCE) in single crystalline solar cells
(SCS) is feasible. In the approach, the optimization of
etched depth to reduce reflection of sunlight and the
maximization of surface area of wafer to increase current
absorption were performed by plasma enhanced chemical
vapor deposition (PECVD). Results obtained by a standard
testing equipment under AM 1.5G illumination has proved
this method to be effective in increasing the open-circuit
voltage and the short-circuit current of SCS with the PCE
being 19 % or above.
