Ultra High Voltage Device RESURF LDMOS Technology on Drain- and Source-Centric Design Optimization

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题名:	Ultra High Voltage Device RESURF LDMOS Technology on Drain- and Source-Centric Design Optimization
作者:	楊紹明;Yang, Shao-Ming;*;Chen, Po-An;Chen, Po-An;Pan, CH;Pan, CH
贡献者:	資訊工程學系
日期:	2016-11
上传时间:	2016-11-08 02:35:24 (UTC+0)
摘要:	We present drain and source-centric design optimizations of a linear P-top and dual-channel conduction path LDMOS (lateral double-diffused metal-oxide semiconductor) structure for low specific on-resistance (Ron.sp) powered transistor devices. The design was simulated using TCAD tools, and a real silicon device was fabricated successfully in accordance with the simulation. The 3D effect in the cylindrical layout with the linear P-top doping profiles was designed using an analytical model to obtain optimal charged balance for the drain- and source-centric regions. The silicon result, with an optimized P-top doping process window, achieved a breakdown voltage (BV) of 842 V, which was higher than 800 V. Thus, the use of a dual-channel conduction path technique with an N-top layer implanted over the P-top can improve Ron.sp by 25% without compromising BV.
關聯:	Applied Mathematics & Information Sciences
显示于类别:	[資訊工程學系] 期刊論文

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