Effect of Time and Temperature on Epitaxy Growth

ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 > Item 310904400/101500

請使用永久網址來引用或連結此文件: http://asiair.asia.edu.tw/ir/handle/310904400/101500

題名:	Effect of Time and Temperature on Epitaxy Growth
作者:	Imam；, Aanand；Aanand；許健；Gene Sheu；楊紹明；Shao-Ming Yang；*；賴秋仲；Ciou-Jhong Lai；Syed；Syed Sarwar
貢獻者:	資訊工程學系
日期:	2016-03
上傳時間:	2016-09-20 03:46:07 (UTC+0)
摘要:	The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits fabrication that use epitaxial wafers require a lightly epitaxial layer (1014-1017 atom/cm3) on a heavily doped substrate (1019-1021 atom/cm3). The distribution of vacancies and interstitials is important for the distribution of the high surface concentration enhancement of tail diffusivity and oxidation enhanced diffusion. We present the auto doping during the epitaxy growth process which is being ignored most of the time during the device fabrication. Also the defects which are formed during the growth of epitaxy. The present simulation solves for the transient interstitials distribution assuming that interstitials are at equilibrium with vacancies.
關聯:	China Semiconductor Technology International Conference
顯示於類別:	[資訊工程學系] 期刊論文

文件中的檔案:

檔案	大小	格式	瀏覽次數
index.html	0Kb	HTML	265	檢視/開啟

在ASIAIR中所有的資料項目都受到原著作權保護.