Characteristic Analysis of Metal Oxide Semiconductor Devices with High-k Gate Oxide Dielectrics

ASIA unversity > 資訊學院 > 光電與通訊學系 > 博碩士論文 > Item 310904400/100635

Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/100635

Title:	Characteristic Analysis of Metal Oxide Semiconductor Devices with High-k Gate Oxide Dielectrics
Authors:	Chang, Hsiu-Fu
Contributors:	光電與通訊學系
Keywords:	thin-film-transistor;High-k dielectric materialal;plasma treatment;HfAlO
Date:	2016
Issue Date:	2016-08-12 03:29:40 (UTC+0)
Publisher:	亞洲大學
Abstract:	In this work, the hafnium oxide(HfO2) doped aluminum to produce hafnium aluminum oxide (HfAlO) of high dielectric oxide layer material that deposition by chemical vapor atomic layer deposition (ALD), and then the two types high dielectric oxide materials with oxygen plasma and nitrogen plasma surface treatment to reduce the concentration of defects. By current-voltage and capacitance-voltage characteristics, it can be seen that the leakage current is obviously improved, and then the XPS analysis and the component curve fitting are used to verify. Confirm that the sediment of the hafnium oxide and hafnium aluminum oxide with oxygen plasma and nitrogen plasma surface treatment can reduce the defect density to improve the insulation leakage current. According to the result, hafnium aluminum oxide as a thin film transistor gate insulation layer to make the bottom gate structure of indium gallium zinc oxide thin film transistor (IGZO-TTFT). From the electrical measurement results show that the gate leakage current is significantly reduced. The thin film transistor without plasma treatment showed that threshold voltage, sub-threshold swing and the field effect mobility were extracted to be 1.41V, 870mV/dec and 39.14 cm2/Vs ,respectively. The thin film transistor with oxygen plasma treatment showed that threshold voltage, sub-threshold swing and the field effect mobility were extracted to be 1.37V, 528mV/dec and 17.86 cm2/Vs ,respectively. The thin film transistor with nitrogen plasma treatment showed that threshold voltage, sub-threshold swing and the field effect mobility were extracted to be 1.72V, 520mV/dec and8.6cm2/Vs ,respectively. Although the carrier mobility will decline after the plasma, the sub-threshold swing (S.S.) will be better. In addition, the plasma treatment will make the devices into a normally closed state with a power saving effect.
Appears in Collections:	[光電與通訊學系] 博碩士論文

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